Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells (2013)

First Author: Massabuau F

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4792505

Publication URI: http://dx.doi.org/10.1063/1.4792505

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 7