InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength (2010)

First Author: Zhu D

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.200983522

Publication URI: http://dx.doi.org/10.1002/pssc.200983522

Type: Journal Article/Review

Parent Publication: physica status solidi (c)

Issue: 7-8