Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiN x and AlGaN layers (2010)

First Author: Haeberlen M

Attributed to: LED Lighting for the 21st Century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1742-6596/209/1/012017

Publication URI: http://dx.doi.org/10.1088/1742-6596/209/1/012017

Type: Journal Article/Review

Parent Publication: Journal of Physics: Conference Series