The influence of coalescence time on unintentional doping in GaN/sapphire (2009)

First Author: Das Bakshi S

Attributed to: LED Lighting for the 21st Century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2008.11.015

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2008.11.015

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 2