The impact of growth parameters on trench defects in InGaN/GaN quantum wells Impact of growth parameters on trench defects in InGaN/GaN QWs (2014)

First Author: Massabuau F

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201300485

Publication URI: http://dx.doi.org/10.1002/pssa.201300485

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 4