Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing (2014)
Attributed to:
Science Bridge Award USA: Harnessing Materials for Energy
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4865653
Publication URI: http://dx.doi.org/10.1063/1.4865653
Type: Conference/Paper/Proceeding/Abstract