Enhanced n-type dopant solubility in tensile-strained Si (2008)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.tsf.2008.08.072
Publication URI: http://dx.doi.org/10.1016/j.tsf.2008.08.072
Type: Journal Article/Review
Parent Publication: Thin Solid Films
Issue: 1