On artefacts in the secondary ion mass spectrometry profiling of high fluence H+ implants in GaAs (2010)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.nimb.2010.02.033
Publication URI: http://dx.doi.org/10.1016/j.nimb.2010.02.033
Type: Journal Article/Review
Parent Publication: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Issue: 11-12