The evolution of vacancy-type defects in silicon-on-insulator structures studied by positron annihilation spectroscopy (2011)

First Author: Coleman P

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3605487

Publication URI: http://dx.doi.org/10.1063/1.3605487

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 1