Vacancy-type defects created by single-shot and chain ion implantation of silicon (2012)

First Author: Coleman P

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/1367-2630/14/2/025007

Publication URI: http://dx.doi.org/10.1088/1367-2630/14/2/025007

Type: Journal Article/Review

Parent Publication: New Journal of Physics

Issue: 2