High-efficiency InGaN/GaN quantum well structures on large area silicon substrates (2012)

First Author: Zhu D
Attributed to:  Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201100129

Publication URI: http://dx.doi.org/10.1002/pssa.201100129

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 1