InAs N-MOSFETs with record performance of Ion = 600 µA/µm at Ioff = 100 nA/µm (Vd = 0.5 V) (2013)

First Author: Chang S

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/iedm.2013.6724639

Publication URI: http://dx.doi.org/10.1109/iedm.2013.6724639

Type: Conference/Paper/Proceeding/Abstract