Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices (2011)

First Author: Ahn J

Attributed to: III-V MOSFETs for Ultimate CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3662966

Publication URI: http://dx.doi.org/10.1063/1.3662966

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 23