Influence of dielectric-dependent interfacial widths on device performance in top-gate P(NDI2OD-T2) field-effect transistors (2012)

First Author: Yan H
Attributed to:  Structural Nanoprobes of Organic Semiconductor Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4748976

Publication URI: http://dx.doi.org/10.1063/1.4748976

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 9