Improved Optoelectronic Properties of Rapid Thermally Annealed Dilute Nitride GaInNAs Photodetectors (2012)
Attributed to:
New high-performance avalanche photodiodes based on the unique properties of dilute nitrides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1007/s11664-012-2245-9
Publication URI: http://dx.doi.org/10.1007/s11664-012-2245-9
Type: Journal Article/Review
Parent Publication: Journal of Electronic Materials
Issue: 12