Isotope effect on the lifetime of the 2 p 0 state in phosphorus-doped silicon (2013)

First Author: Hübers H
Attributed to:  Far Infra-Red Emission and Lasing in Doped Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.88.035201

Publication URI: http://dx.doi.org/10.1103/physrevb.88.035201

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 3