Inhomogeneous broadening of phosphorus donor lines in the far-infrared spectra of single-crystalline SiGe (2010)

First Author: Lynch S
Attributed to:  Far Infra-Red Emission and Lasing in Doped Semiconductors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.82.245206

Publication URI: http://dx.doi.org/10.1103/physrevb.82.245206

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 24