Boron d-doped (111) diamond solution gate field effect transistors. (2012)

First Author: Edgington R
Attributed to:  Diamond devices for bioelectronic applications - invited resubmission funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.bios.2011.12.044

PubMed Identifier: 22317833

Publication URI: http://europepmc.org/abstract/MED/22317833

Type: Journal Article/Review

Volume: 33

Parent Publication: Biosensors & bioelectronics

Issue: 1

ISSN: 0956-5663