Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules (2016)

First Author: Jahdi S
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tie.2015.2491880

Publication URI: http://dx.doi.org/10.1109/tie.2015.2491880

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Industrial Electronics

Issue: 2