A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor (2015)
Attributed to:
Silicon Compatible GaN Power Electronics
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2015.04.067
Publication URI: http://dx.doi.org/10.1016/j.mee.2015.04.067
Type: Journal Article/Review
Parent Publication: Microelectronic Engineering