Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors (2014)

First Author: Uren M
Attributed to:  GaN Electronics: RF Reliability and Degradation Mechanisms funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4885695

Publication URI: http://dx.doi.org/10.1063/1.4885695

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 26