A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures Inclusion of prelayers in InGaN/GaN single and multiple QWs (2015)

First Author: Davies M
Attributed to:  Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201451535

Publication URI: http://dx.doi.org/10.1002/pssb.201451535

Type: Journal Article/Review

Parent Publication: physica status solidi (b)

Issue: 5