Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells (2016)

First Author: Christian G
Attributed to:  Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201510180

Publication URI: http://dx.doi.org/10.1002/pssc.201510180

Type: Journal Article/Review

Parent Publication: physica status solidi (c)

Issue: 5-6