Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs (2016)

First Author: Hammersley S
Attributed to:  Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201510188

Publication URI: http://dx.doi.org/10.1002/pssc.201510188

Type: Journal Article/Review

Parent Publication: physica status solidi (c)

Issue: 5-6