Investigation of Parasitic Edge Recombination in High-Lifetime Oxidized <i>n</i>-Si (2015)
Attributed to:
Improved surface passivation for semiconductor solar cells
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/ssp.242.73
Publication URI: http://dx.doi.org/10.4028/www.scientific.net/ssp.242.73
Type: Journal Article/Review
Parent Publication: Solid State Phenomena