Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1-x)N layers as a function of InN content, layer thickness and growth parameters (2012)

First Author: Vennéguès P
Attributed to:  Gallium nitride enabled hybrid and flexible photonics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2012.05.004

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2012.05.004

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth

Issue: 1