Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability (2016)

First Author: Crawford K
Attributed to:  Ultra short gate length diamond FETs for high power/high frequency applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4940749

Publication URI: http://dx.doi.org/10.1063/1.4940749

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 4