Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS (2016)

First Author: Hu J

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tie.2015.2500187

Publication URI: http://dx.doi.org/10.1109/tie.2015.2500187

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Industrial Electronics

Issue: 4