GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology (2016)

First Author: Eblabla A
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tthz.2016.2618751

Publication URI: http://dx.doi.org/10.1109/tthz.2016.2618751

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Terahertz Science and Technology