A mechanism for Frenkel defect creation in amorphous SiO2 facilitated by electron injection. (2016)
Attributed to:
Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0957-4484/27/50/505207
PubMed Identifier: 27855121
Publication URI: http://europepmc.org/abstract/MED/27855121
Type: Journal Article/Review
Volume: 27
Parent Publication: Nanotechnology
Issue: 50
ISSN: 0957-4484