High frequency hydrogen-terminated diamond field effect transistor technology (2012)

First Author: Moran D
Attributed to:  Ultra short gate length diamond FETs for high power/high frequency applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/nano.2012.6321925

Publication URI: http://dx.doi.org/10.1109/nano.2012.6321925

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4673-2198-3