Permanent annihilation of thermally activated defects which limit the lifetime of float-zone silicon Permanent annihilation of thermally activated defects in FZ-Si (2016)

First Author: Grant N

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201600360

Publication URI: http://dx.doi.org/10.1002/pssa.201600360

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 11