Chemical trends of Schottky barrier behavior on monolayer hexagonal B, Al, and Ga nitrides (2016)

First Author: Lu H
Attributed to:  Integration of Novel Materials in Spintronic Devices funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4960689

Publication URI: http://dx.doi.org/10.1063/1.4960689

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 6