Influence of trench period and depth on MOVPE grown ( 11 2 ¯ 2 ) GaN on patterned r-plane sapphire substrates. (2016)

First Author: Caliebe M

Attributed to: LED Lighting for the 21st Century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2016.01.014

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2016.01.014

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth