First principles modeling of electron tunneling between defects in m-HfO2 (2015)
Attributed to:
Non-equilibrium electron-ion dynamics in thin metal-oxide films
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1016/j.mee.2015.04.009
Publication URI: http://dx.doi.org/10.1016/j.mee.2015.04.009
Type: Journal Article/Review
Parent Publication: Microelectronic Engineering
ISSN: 0167-9317