Models of oxygen vacancy defects involved in degradation of gate dielectrics (2013)

First Author: Shluger A
Attributed to:  Non-equilibrium electron-ion dynamics in thin metal-oxide films funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/irps.2013.6532018

Publication URI: http://dx.doi.org/10.1109/irps.2013.6532018

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4799-0112-8