Scanning tunneling microscopy contrast of isovalent impurities on the GaAs (110) surface explained with a geometrical model (2016)

First Author: Tilley F

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/PhysRevB.93.035313

Publication URI: http://dx.doi.org/10.1103/PhysRevB.93.035313

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 3