Characterization of 4H-SiC PiN Diodes Formed on Defects Identified by PL Imaging (2016)

First Author: Bonyadi Y

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/MSF.858.405

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/MSF.858.405

Type: Journal Article/Review

Parent Publication: Materials Science Forum