Zero reverse recovery in SiC and GaN Schottky diodes: A comparison (2016)

First Author: Efthymiou L
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/ispsd.2016.7520780

Publication URI: http://dx.doi.org/10.1109/ispsd.2016.7520780

Type: Conference/Paper/Proceeding/Abstract