Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Fabricated on SiC Substrates (2015)

First Author: Hopf T
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.937

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.937

Type: Journal Article/Review

Parent Publication: Materials Science Forum