Process Compatibility of Heavily Nitrogen Doped Layers Formed by Ion Implantation in Silicon Carbide Devices (2015)

First Author: Vassilevski K
Attributed to:  Underpinning Power Electronics 2012: Devices Theme funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.411

Publication URI: http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.411

Type: Journal Article/Review

Parent Publication: Materials Science Forum