Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources (2017)

First Author: Novikov S
Attributed to:  Free-standing wurtzite AlGaN substrates for deep ultraviolet (DUV) devices. funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.jcrysgro.2017.01.007

Publication URI: http://dx.doi.org/10.1016/j.jcrysgro.2017.01.007

Type: Journal Article/Review

Parent Publication: Journal of Crystal Growth