Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold (2016)

First Author: Griffiths J
Attributed to:  Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4965989

Publication URI: http://dx.doi.org/10.1063/1.4965989

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 16