The impact of post-deposition annealing on the performance of solution-processed single layer In 2 O 3 and isotype In 2 O 3 /ZnO heterojunction transistors (2017)
Attributed to:
Imperial College London - Equipment Account
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1039/c6tc04907a
Publication URI: http://dx.doi.org/10.1039/c6tc04907a
Type: Journal Article/Review
Parent Publication: Journal of Materials Chemistry C
Issue: 1