The impact of post-deposition annealing on the performance of solution-processed single layer In 2 O 3 and isotype In 2 O 3 /ZnO heterojunction transistors (2017)

First Author: Tetzner K
Attributed to:  Imperial College London - Equipment Account funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1039/C6TC04907A

Publication URI: http://dx.doi.org/10.1039/C6TC04907A

Type: Journal Article/Review

Parent Publication: Journal of Materials Chemistry C

Issue: 1