The impact of post-deposition annealing on the performance of solution-processed single layer In 2 O 3 and isotype In 2 O 3 /ZnO heterojunction transistors (2017)

First Author: Tetzner K
Attributed to:  Imperial College London - Equipment Account funded by EPSRC


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Type: Journal Article/Review

Parent Publication: Journal of Materials Chemistry C

Issue: 1