(Invited) Instability Mechanisms in Amorphous Oxide Semiconductors Leading to a Threshold Voltage Shift in Thin Film Transistors (2017)

First Author: Flewitt A
Attributed to:  The Physics and Engineering of Oxide Semiconductors for Large-Area CMOS funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1149/07901.0049ecst

Publication URI: http://dx.doi.org/10.1149/07901.0049ecst

Type: Journal Article/Review

Parent Publication: ECS Transactions

Issue: 1