Properties of GaN nanowires with Sc x Ga 1 -x N insertion Properties of GaN nanowires with Sc x Ga 1- x N insertion (2017)

First Author: Bao A
Attributed to:  Beyond Blue: New Horizons in Nitrides (Platform Grant Renewal) funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssb.201600740

Publication URI: http://dx.doi.org/10.1002/pssb.201600740

Type: Journal Article/Review

Parent Publication: physica status solidi (b)

Issue: 8