Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt- and Ni-based gate stacks Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors (2017)

First Author: Floros K

Attributed to: Silicon Compatible GaN Power Electronics funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201600835

Publication URI: http://dx.doi.org/10.1002/pssa.201600835

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 8