Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon (2017)
Attributed to:
SuperSilicon PV: extending the limits of material performance
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.4983024
Publication URI: http://dx.doi.org/10.1063/1.4983024
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 18