Radiation-induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics (2017)

First Author: Lastovskii S
Attributed to:  SuperSilicon PV: extending the limits of material performance funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201700262

Publication URI: http://dx.doi.org/10.1002/pssa.201700262

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 7