Theory of a carbon-oxygen-hydrogen recombination center in n-type Si (2017)

First Author: Santos P
Attributed to:  SuperSilicon PV: extending the limits of material performance funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201700309

Publication URI: http://dx.doi.org/10.1002/pssa.201700309

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 7